High Power Heterostructure Barrier Varactor Quintupler Sources for G-Band Operation
Paper in proceeding, 2008

We have designed a frequency multiplier based on Heterostructure Barrier Varactors (HBVs) at 202 GHz. The InGaAs/InAlAs/InP HBV diodes were flip-chip mounted onto an aluminium-nitride (AlN) substrate with the microstrip pattern. The AlN-circuit was then mounted in an ultra compact 30x9 mm waveguide block. A quintupler (x5) operating at 202 GHz produced an output power of 23 mW.

terahertz sources

millimeter wave components



Josip Vukusic

Chalmers, Applied Physics, Physical Electronics

Tomas Bryllert

Chalmers, Applied Physics, Physical Electronics

Jan Stake

Chalmers, Applied Physics, Physical Electronics

Proceedings of the 19th International Symposium on Space Terahertz Technology, [ISSTT 2008], April 28 to 30, 2008, Groningen, the Netherlands

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering


Nanofabrication Laboratory

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