High Power Heterostructure Barrier Varactor Quintupler Sources for G-Band Operation
Paper i proceeding, 2008

We have designed a frequency multiplier based on Heterostructure Barrier Varactors (HBVs) at 202 GHz. The InGaAs/InAlAs/InP HBV diodes were flip-chip mounted onto an aluminium-nitride (AlN) substrate with the microstrip pattern. The AlN-circuit was then mounted in an ultra compact 30x9 mm waveguide block. A quintupler (x5) operating at 202 GHz produced an output power of 23 mW.

terahertz sources

millimeter wave components

HBV

Författare

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Tomas Bryllert

Chalmers, Teknisk fysik, Fysikalisk elektronik

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

Proceedings of the 19th International Symposium on Space Terahertz Technology, [ISSTT 2008], April 28 to 30, 2008, Groningen, the Netherlands

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet