Vertical high-mobility wrap-gated InAs nanowire transistor
Journal article, 2006
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
wrap gate
field-effect transistor (FET) InAs
nanowires
Author
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Lars-Erik Wernersson
QuNano AB
Lund University
Linus Fröberg
Lund University
Lars Samuelson
Lund University
QuNano AB
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 27 5 323-325Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LED.2006.873371