Design, Fabrication and characterisation of High Power HBV Diodes
Paper in proceedings, 2005

We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.

HBV

Author

Arezoo Emadi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ingvarson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Engineering and Industrial Design, MC2 Process Laboratory

Tomas Bryllert

Arne Olsen

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Stake

Engineering and Industrial Design, MC2 Process Laboratory

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.)

Session: P05-04

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017