Design, Fabrication and characterisation of High Power HBV Diodes
Paper in proceeding, 2005
We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.
HBV
Author
Arezoo Emadi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ingvarson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mahdad Sadeghi
Engineering and Industrial Design, MC2 Process Laboratory
Tomas Bryllert
Arne Olsen
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Stake
Engineering and Industrial Design, MC2 Process Laboratory
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.)
Session: P05-04
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering