Design, Fabrication and characterisation of High Power HBV Diodes
Paper i proceeding, 2005

We present design and analysis of material structures and device geometries for heterostructure barrier varactor diodes (HBVs) for high-power frequency multipliers. The methods aim at finding optimum epitaxial layer structures with respect to diode power handling capability and efficiency. A distributed device geometry for further increasing the output power levels whilst maintaining acceptable device temperatures is also presented. Finally, an electro-thermal HBV model with the ability of incorporating temperature-dependent device parameters is used to simulate the introduced devices, followed by a design example of a 3×4-barrier high-power HBV diode.

HBV

Författare

Arezoo Emadi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Josip Vukusic

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ingvarson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mahdad Sadeghi

Maskinkonstruktion och design, MC2 process laboratorium

Arne Olsen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Stake

Maskinkonstruktion och design, MC2 process laboratorium

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

16th International Symposium on Space Terahertz Technology; Chalmers Conference Centre, May 2-4, 2005, Gothenburg, Sweden, (Eds. Jan Stake, Harald Merkel.)

Session: P05-04

Ämneskategorier

Annan elektroteknik och elektronik