Analysis of the High Frequency Spreading Resistance for Surface Channel Planar Schottky Diodes
Paper in proceeding, 2010
Spreading resistance of a planar Schottky diode is
studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective high frequency resistance for a buffer layer thicker than skin depth, due to the parasitic capacitances induced current in buffer layer.
electromagnetic coupling
resistance
Schottky diodes
skin effect
geometric modeling
submillimeter wave diodes
submillimeter wave technology
Current distribution
Author
Aik-Yean Tang
GigaHertz Centre
Chalmers, Applied Physics, Physical Electronics
Peter Sobis
GigaHertz Centre
Chalmers, Applied Physics, Physical Electronics
Huan Zhao Ternehäll
GigaHertz Centre
Chalmers, Applied Physics, Physical Electronics
Vladimir Drakinskiy
Chalmers, Applied Physics, Physical Electronics
Tomas Bryllert
GigaHertz Centre
Chalmers, Applied Physics, Physical Electronics
Jan Stake
Chalmers, Applied Physics, Physical Electronics
GigaHertz Centre
35th International Conference on Infrared, Millimeter and Terahertz Waves
5-10 Sept. 2010 1-2
978-1-4244-6655-9 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIMW.2010.5612850
ISBN
978-1-4244-6655-9