Analysis of the High Frequency Spreading Resistance for Surface Channel Planar Schottky Diodes
Paper in proceedings, 2010

Spreading resistance of a planar Schottky diode is studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective high frequency resistance for a buffer layer thicker than skin depth, due to the parasitic capacitances induced current in buffer layer.

electromagnetic coupling

resistance

Schottky diodes

skin effect

geometric modeling

submillimeter wave diodes

submillimeter wave technology

Current distribution

Author

Aik-Yean Tang

GigaHertz Centre

Chalmers, Applied Physics, Physical Electronics

Peter Sobis

GigaHertz Centre

Chalmers, Applied Physics, Physical Electronics

Huan Zhao Ternehäll

GigaHertz Centre

Chalmers, Applied Physics, Physical Electronics

Vladimir Drakinskiy

Chalmers, Applied Physics, Physical Electronics

Tomas Bryllert

GigaHertz Centre

Chalmers, Applied Physics, Physical Electronics

Jan Stake

Chalmers, Applied Physics, Physical Electronics

GigaHertz Centre

35th International Conference on Infrared, Millimeter and Terahertz Waves

5-10 Sept. 2010 1-2

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIMW.2010.5612850

ISBN

978-1-4244-6655-9

More information

Created

10/7/2017