Development of a 557 GHz GaAs monolithic membrane-diode mixer
Paper in proceedings, 2012

We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.

membrane circuits

submillimeter wave mixers

Schottky diodes

receivers

Author

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Peter Sobis

GigaHertz Centre

Johanna Hanning

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Aik-Yean Tang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Jan Stake

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

24th International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

102-105

Areas of Advance

Information and Communication Technology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIPRM.2012.6403330

ISBN

9781467317252

More information

Created

10/7/2017