Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
Journal article, 2007
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the destructive current leaking over and through the barrier is investigated for different biases and operating temperatures. The authors found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.
varactors
leakage currents
aluminium compounds
III-V semiconductors
indium compounds
gallium arsenide
Author
Arezoo Emadi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 90 1 012108-3 012108Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1063/1.2430632