Analytical Extraction of a Schottky Diode Model from Broadband S-parameters
Journal article, 2013
We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.
terahertz.
Schottky diodes
multibias
parameter extraction
equivalent circuits
millimeter-wave devices
Analytical model
modeling
scattering parameters
Author
Aik-Yean Tang
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Vladimir Drakinskiy
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
Klas Yhland
GigaHertz Centre
Jörgen Stenarson
GigaHertz Centre
Tomas Bryllert
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 61 5 1870-1878 6485005Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/TMTT.2013.2251655