Analytical Extraction of a Schottky Diode Model from Broadband S-parameters
Journal article, 2013

We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

terahertz.

Schottky diodes

multibias

parameter extraction

equivalent circuits

millimeter-wave devices

Analytical model

modeling

scattering parameters

Author

Aik-Yean Tang

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Klas Yhland

GigaHertz Centre

Jörgen Stenarson

GigaHertz Centre

Tomas Bryllert

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 61 5 1870-1878

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/TMTT.2013.2251655

More information

Created

10/7/2017