Charge carrier dynamics at the SiO2/SiC interface
Licentiatavhandling, 1998

interface quality

SiO2/SiC metal oxide semiconductor (MOS)

high frequency C-V measurement

oxidation of SiC

capacitance simulations

thermal non-equilibrium

Författare

Mahdad Sadeghi

Institutionen för mikroelektronik

Ämneskategorier

Annan elektroteknik och elektronik

ISBN

91-7197-733-3

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 298