Charge carrier dynamics at the SiO2/SiC interface
Licentiatavhandling, 1998
interface quality
SiO2/SiC metal oxide semiconductor (MOS)
high frequency C-V measurement
oxidation of SiC
capacitance simulations
thermal non-equilibrium
Författare
Mahdad Sadeghi
Institutionen för mikroelektronik
Ämneskategorier
Annan elektroteknik och elektronik
ISBN
91-7197-733-3
Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 298