Charge carrier dynamics at the SiO2/SiC interface
Licentiate thesis, 1998
interface quality
SiO2/SiC metal oxide semiconductor (MOS)
high frequency C-V measurement
oxidation of SiC
capacitance simulations
thermal non-equilibrium
Author
Mahdad Sadeghi
Department of Microelectronics
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
91-7197-733-3
Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 298