Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection
Artikel i vetenskaplig tidskrift, 2013

We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.

semiconductor device modeling

heterostructure backward tunneling diode

millimeter and submillimeter wave

detector

Författare

Parisa Yadranjee Aghdam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 10 5 777-781

Stokastiska modeller av gen- och artträd

Vetenskapsrådet (VR), 2011-01-01 -- 2013-12-31.

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1002/pssc.201200621

Mer information

Skapat

2017-10-07