Modeling of Sb-heterostructure backward diode for millimeter- and submillimeter-wave detection
Journal article, 2013
We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.
semiconductor device modeling
heterostructure backward tunneling diode
millimeter and submillimeter wave
detector
Author
Parisa Yadranjee Aghdam
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Physica Status Solidi (C) Current Topics in Solid State Physics
1862-6351 (ISSN) 1610-1642 (eISSN)
Vol. 10 5 777-781Stochastic models of gene and species trees
Swedish Research Council (VR) (2010-5623), 2011-01-01 -- 2013-12-31.
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1002/pssc.201200621