Modeling of Sb-Heterostructure Backward Diode for Millimeter- and Submillimeter- Wave Detection
Paper i proceeding, 2012

We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode epitaxy is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.

millimeter and submillimeter wave

semiconductor device modeling

heterostructure backward tunneling diode

detector

Författare

Parisa Yadranjee Aghdam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

39th International Symposium on Compound Semiconductors

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Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

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Nanoteknik

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