Modeling of Sb-Heterostructure Backward Diode for Millimeter- and Submillimeter- Wave Detection
Paper in proceedings, 2012

We present modeling of Sb-heterostructure backward tunneling diode (Sb-HBD) for high efficient millimeter- and submillimeter wave detection. The diode epitaxy is modeled and optimized using TCAD software implementing a non-local band-to-band tunneling model combining with the standard drift-diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb-HBDs for high frequency operation applications is investigated.

millimeter and submillimeter wave

semiconductor device modeling

heterostructure backward tunneling diode

detector

Author

Parisa Yadranjee Aghdam

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

39th International Symposium on Compound Semiconductors

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

Infrastructure

Nanofabrication Laboratory

More information

Created

10/7/2017