Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
Paper i proceeding, 2011

In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 μm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiN x materials respectively. Onwafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.

thin film resistor

thin film capacitor

S parameter

membrane

Författare

Huan Zhao Ternehäll

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Peter Sobis

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Aik-Yean Tang

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Klas Yhland

GigaHertz Centrum

Jörgen Stenarson

GigaHertz Centrum

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

GigaHertz Centrum

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

1092-8669 (ISSN)

1-4

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

ISBN

978-145771753-6

Mer information

Skapat

2017-10-07