Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
Paper in proceeding, 2011

In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 μm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiN x materials respectively. Onwafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.

S parameter

thin film capacitor

membrane

thin film resistor

Author

Huan Zhao Ternehäll

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Thi Ngoc Do Thanh

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Peter Sobis

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

Aik-Yean Tang

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Klas Yhland

GigaHertz Centre

Jörgen Stenarson

GigaHertz Centre

Jan Stake

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

1092-8669 (ISSN)

1-4
978-145771753-6 (ISBN)

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

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