Fabrication and DC characterization of InAs/AlSb self-switching diodes
Paper i proceeding, 2012

Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.

Författare

[Person df8a784f-83a3-4ea7-9755-8511e2e9502d not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 44606a3f-212d-4d92-a76c-be1de769f7df not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 70b416d5-ff2b-4906-97c6-d0338d5adc93 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

[Person 91b788bf-4c23-4f6e-b690-1ecb20af3a98 not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

[Person 0b6f1084-6c62-4c77-b910-3c2c491140ea not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

65-68

Ämneskategorier

Fysik

DOI

10.1109/ICIPRM.2012.6403320

ISBN

978-146731725-2

Mer information

Skapat

2017-10-06