Fabrication and DC characterization of InAs/AlSb self-switching diodes
Paper i proceeding, 2012

Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

65-68
978-146731725-2 (ISBN)

Ämneskategorier

Fysik

DOI

10.1109/ICIPRM.2012.6403320

ISBN

978-146731725-2

Mer information

Skapat

2017-10-06