Fabrication and DC characterization of InAs/AlSb self-switching diodes
Paper i proceeding, 2012

Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

65-68

Ämneskategorier

Fysik

DOI

10.1109/ICIPRM.2012.6403320

ISBN

978-146731725-2

Mer information

Skapat

2017-10-06