Fabrication and DC characterization of InAs/AlSb self-switching diodes
Paper in proceedings, 2012

Fabrication and DC measurements of an InAs/AlSb self-switching diode (SSD), aimed for THz detection, is presented. An SSD with a channel width of 160 nm and a trench width of 240 nm was designed and fabricated in a process using an in situ passivation procedure of the oxidation-sensitive trench. Rectifying behavior was observed in the I-V characteristics. The device performance was relatively stable over a period of three months.

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

65-68

Subject Categories

Physical Sciences

DOI

10.1109/ICIPRM.2012.6403320

ISBN

978-146731725-2

More information

Created

10/6/2017