Anisotropic transport properties in InAs/AlSb heterostructures
Journal article, 2010
We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a
(001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electron
mobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated an
enhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobility
transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance
gm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG was
correlated with an asymmetric dislocation pattern observed in the surface morphology and by
cross-sectional microscopy analysis of the InAs/AlSb heterostructure.
Hall effect
surface morphology
electric resistance
III-V semiconductors
dislocations
semiconductor growth
electron mobility
indium compounds
high electron mobility transistors
aluminium compounds
cooling
two-dimensional electron gas
semiconductor heterojunctions
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Huan Zhao Ternehäll
Chalmers, Applied Physics, Physical Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Alexei Kalaboukhov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
G. Dambrine
Chalmers, Microtechnology and Nanoscience (MC2)
Lille 1 University of Science and Technology
S. Bollaert
Chalmers, Microtechnology and Nanoscience (MC2)
Lille 1 University of Science and Technology
L. Desplanque
Lille 1 University of Science and Technology
Chalmers, Microtechnology and Nanoscience (MC2)
X. Wallart
Lille 1 University of Science and Technology
Chalmers, Microtechnology and Nanoscience (MC2)
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 24 3- 243510Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1063/1.3527971