Anisotropic transport properties in InAs/AlSb heterostructures
Journal article, 2010

We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a (001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electron mobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated an enhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobility transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance gm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG was correlated with an asymmetric dislocation pattern observed in the surface morphology and by cross-sectional microscopy analysis of the InAs/AlSb heterostructure.

Hall effect

surface morphology

electric resistance

III-V semiconductors

dislocations

semiconductor growth

electron mobility

indium compounds

high electron mobility transistors

aluminium compounds

cooling

two-dimensional electron gas

semiconductor heterojunctions

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Huan Zhao Ternehäll

Chalmers, Applied Physics, Physical Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

G. Dambrine

Chalmers, Microtechnology and Nanoscience (MC2)

Lille 1 University of Science and Technology

S. Bollaert

Chalmers, Microtechnology and Nanoscience (MC2)

Lille 1 University of Science and Technology

L. Desplanque

Lille 1 University of Science and Technology

Chalmers, Microtechnology and Nanoscience (MC2)

X. Wallart

Lille 1 University of Science and Technology

Chalmers, Microtechnology and Nanoscience (MC2)

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 24 3- 243510

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.3527971

More information

Latest update

7/22/2019