0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Artikel i vetenskaplig tidskrift, 2018

We present two monolithic microwave integrated circuit (MMIC) cryogenic broadband low-noise amplifiers (LNAs) based on the 100 nm gate length InP high-electron mobility transistor technology for the frequency range of 0.3-14 and 16-28 GHz. The 0.3-14 GHz three-stage LNA exhibited a gain of 41.6 ± 1.4 dB and an average noise temperature of 3.5 K with a minimum noise temperature of 2.2 K at 6 GHz when cooled down to 4 K. The 16-28 GHz three-stage LNA showed a gain of 32.3 ± 1.8 dB and an average noise temperature of 6.3 K with a minimum noise temperature of 4.8 K at 20.8 GHz at the ambient temperature of 4 K. This is the first demonstration of cryogenic MMIC LNA covering the whole K-band. To the best of the authors' knowledge, the cryogenic MMIC LNAs demonstrated the state-of-the-art noise performance in the 0.3-14 and 16-28 GHz frequency range.

monolithic microwave integrated circuits (MMICs)

Cryogenic

low-noise amplifiers (LNAs)

noise temperature

wideband

high-electron mobility transistors (HEMTs)

Författare

Eunjung Cha

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per Ake Nilsson

Low Noise Factory AB

Joel Schleeh

Low Noise Factory AB

Giuseppe Moschetti

Low Noise Factory AB

Arsalan Pourkabirian

Low Noise Factory AB

Silvia Tuzi

Chalmers, Fysik, Materialens mikrostruktur

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 66 11 4860-4869 8500350

Fundament

Grundläggande vetenskaper

Ämneskategorier

Annan fysik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TMTT.2018.2872566

Mer information

Senast uppdaterat

2018-11-26