Joel Schleeh

Visar 33 publikationer

2019
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Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
Övrigt konferensbidrag
2019

Low Power Cryogenic Rad-hard LNAs for Space

Christina Emrich, Peter Sobis, Niklas Wadefalk et al
Paper i proceeding
2019
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On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Artikel i vetenskaplig tidskrift
2019
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Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper i proceeding
2019
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A 183-GHz Schottky diode receiver with 4 dB noise figure

Martin Anderberg, Peter Sobis, Vladimir Drakinskiy et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2019-June, p. 172-175
Paper i proceeding
2018
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Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
CSW 2018 Proceedings, p. 183-183
Övrigt konferensbidrag
2018
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Magnetic Influence on CryogenicInP HEMT LNAs

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Övrigt konferensbidrag
2018
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Low noise 874 GHz receivers for the international submillimetre airborne radiometer (ISMAR)

Arvid Hammar, Peter Sobis, Vladimir Drakinskiy et al
Review of Scientific Instruments. Vol. 89 (5)
Artikel i vetenskaplig tidskrift
2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Artikel i vetenskaplig tidskrift
2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper i proceeding
2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2017
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Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

M. A. McCulloch, Jan Grahn, S. J. Melhuish et al
Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)
Artikel i vetenskaplig tidskrift
2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper i proceeding
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2016
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10 K Room Temperature LNA for SKA Band 1

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2016-August, p. Art no 7540344-
Paper i proceeding
2015

Phonon black-body radiation limit for heat dissipation in electronics

Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al
Nature Materials. Vol. 14 (2), p. 187-192
Artikel i vetenskaplig tidskrift
2015
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SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper i proceeding
2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537
Artikel i vetenskaplig tidskrift
2014

Multiplicative and Additive Low-Frequency Noise in Microwave Transistors

S. Weinreb, Joel Schleeh
IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (1), p. 83-91
Artikel i vetenskaplig tidskrift
2014

An InP MMIC process optimized for low noise at Cryo

Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
Solid-State Electronics. Vol. 91, p. 74-77
Artikel i vetenskaplig tidskrift
2014
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Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands
Paper i proceeding
2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877
Artikel i vetenskaplig tidskrift
2013

Influence of gate-channel distance in low-noise InP HEMTs

Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212
Artikel i vetenskaplig tidskrift
2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631
Artikel i vetenskaplig tidskrift
2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2012
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Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Artikel i vetenskaplig tidskrift
2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 241-244
Paper i proceeding
2012
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Ultra-Low Noise InP HEMTs for Cryogenic Amplification

Joel Schleeh
Licentiatavhandling
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Joel Schleeh, John Halonen, Bengt Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper i proceeding

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