Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
Artikel i vetenskaplig tidskrift, 2014

The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.

noise

STABILITY

1/f

radiometers

high electron-mobility transistor (HEMT)

transistors

Gain fluctuations

GAIN FLUCTUATIONS

WIDE-BAND

AMPLIFIERS

HEMTS

Författare

S. Weinreb

CalTech

Joel Schleeh

GigaHertz Centrum

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 62 1 83-91

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2013.2293123