Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
Journal article, 2014

The additive noise (i.e., noise figure) in the 1-Hz-1-GHz range and multiplicative noise (i.e., gain fluctuations) in the 1-Hz-100-kHz range have been measured for six different types of high electron mobility transistors and two heterojunction bipolar transistors. The instrumentation enables measurement of multiplicative noise as small as 10(-6) (1 ppm). Measurements were performed at 300 and 22 K and results are discussed with regard to transistor technology, coupling of additive and multiplicative effects, and bias circuit dependence. The results are applied to radiometers and the degradation in performance due to the gain fluctuation is presented.

GAIN FLUCTUATIONS

WIDE-BAND

high electron-mobility transistor (HEMT)

AMPLIFIERS

radiometers

Gain fluctuations

noise

HEMTS

1/f

STABILITY

transistors

Author

S. Weinreb

California Institute of Technology (Caltech)

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2)

GigaHertz Centre

Published in

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN) 15579670 (eISSN)

Vol. 62Issue 1p. 83-91 art. no 6684329

Categorizing

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Identifiers

DOI

10.1109/tmtt.2013.2293123

More information

Latest update

4/5/2022 7