Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
Journal article, 2014
GAIN FLUCTUATIONS
WIDE-BAND
high electron-mobility transistor (HEMT)
AMPLIFIERS
radiometers
Gain fluctuations
noise
HEMTS
1/f
STABILITY
transistors
Author
S. Weinreb
California Institute of Technology (Caltech)
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2)
GigaHertz Centre
Published in
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 62Issue 1p. 83-91 art. no 6684329Categorizing
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
DOI
10.1109/tmtt.2013.2293123