Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Artikel i vetenskaplig tidskrift, 2013
In this paper, we present a study of the cryogenic performance of InP high electron mobility transistors (HEMTs) in the low-noise region by means of Monte Carlo simulations. A decrease of the contact resistances and an increase in the electron velocity in the channel together with enhanced channel electron confinement upon cooling of the device are observed, and considered to be the reason for the excellent low-noise behavior of cryogenic InP HEMTs. These findings are supported by a good agreement between simulated and experimental DC, RF, and noise figure data of a 130-nm gate length InP HEMT at 300 and 77 K. An increase of the transconductance g(m) and gate-to-source capacitance C-gs is observed when cooling from 300 to 77 K as a consequence of electron velocity increase and improved channel confinement.
noise parameters
InGaAs/InAlAs/InP high electron mobility transistor (HEMT)
low noise
Cryogenic temperature
Monte Carlo simulations
Författare
Helena Rodilla
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Joel Schleeh
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Niklas Wadefalk
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
J. Mateos
Universidad de Salamanca
Jan Grahn
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 60 5 1625-1631Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier
Elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1109/TED.2013.2253469