Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Journal article, 2013

In this paper, we present a study of the cryogenic performance of InP high electron mobility transistors (HEMTs) in the low-noise region by means of Monte Carlo simulations. A decrease of the contact resistances and an increase in the electron velocity in the channel together with enhanced channel electron confinement upon cooling of the device are observed, and considered to be the reason for the excellent low-noise behavior of cryogenic InP HEMTs. These findings are supported by a good agreement between simulated and experimental DC, RF, and noise figure data of a 130-nm gate length InP HEMT at 300 and 77 K. An increase of the transconductance g(m) and gate-to-source capacitance C-gs is observed when cooling from 300 to 77 K as a consequence of electron velocity increase and improved channel confinement.

noise parameters

InGaAs/InAlAs/InP high electron mobility transistor (HEMT)

low noise

Cryogenic temperature

Monte Carlo simulations

Author

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Joel Schleeh

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

J. Mateos

University of Salamanca

Jan Grahn

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 60 5 1625-1631

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/TED.2013.2253469

More information

Latest update

9/3/2018 1