Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
Paper i proceeding, 2013

We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.

low noise

Cryogenic

InP PHEMT

TEMPERATURE

GaAs MHEMT

Författare

Joel Schleeh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Helena Rodilla

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2013 International Conference on Indium Phosphide and Related Materials

1092-8669 (ISSN)

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/ICIPRM.2013.6562600

ISBN

978-1-4673-6131-6