Phonon black-body radiation limit for heat dissipation in electronics
Artikel i vetenskaplig tidskrift, 2015

Thermal dissipation at the active region of electronic devices is a fundamental process of considerable importance. Inadequate heat dissipation can lead to prohibitively large temperature rises that degrade performance, and intensive efforts are under way to mitigate this self-heating. At room temperature, thermal resistance is due to scattering, often by defects and interfaces in the active region, that impedes the transport of phonons. Here, we demonstrate that heat dissipation in widely used cryogenic electronic devices instead occurs by phonon black-body radiation with the complete absence of scattering, leading to large self-heating at cryogenic temperatures and setting a key limiton the noise floor. Our result has important implications for the many fields that require ultralow-noise electronic devices.

Heat dissipation

cryogenic

phonon black-body radiation

electronics

Författare

Joel Schleeh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

J. Mateos

Universidad de Salamanca

Ignacio Íñiguez-De-La-Torre

Universidad de Salamanca

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

A. J. Minnich

CalTech

Nature Materials

1476-1122 (ISSN) 1476-4660 (eISSN)

Vol. 14 187-192

Styrkeområden

Informations- och kommunikationsteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1038/NMAT4126