Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
Artikel i vetenskaplig tidskrift, 2014

We present a comparative study of InGaAs/InAlAs high electron mobility transistors (HEMTs), intended for cryogenic ultra-low noise amplifiers (LNAs) and fabricated on different substrate and buffer technologies. The first was pseudomorphically grown on InP (InP pHEMT) while the second was grown on a linearly graded metamorphic InAlAs buffer on top of a GaAs substrate (GaAs mHEMT). Both HEMTs had identical active epitaxial regions. When integrated in a 4–8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 45 K for the InP pHEMT and 49 K (9% higher) for the GaAs mHEMT. When cooled down to 10 K, the InP pHEMT LNA was improved to 1.7 K whereas the GaAs mHEMT LNA was only reduced to 4 K (135% higher). The observed superior cryogenic noise performance of the HEMTs grown on InP is believed to be due to a higher carrier confinement within the channel. Microscopy analysis suggested this was related to defects from the metamorphic buffer of the GaAs mHEMT.

Författare

Joel Schleeh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Helena Rodilla

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Solid-State Electronics

0038-1101 (ISSN)

Vol. 91 74-77

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