Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Artikel i vetenskaplig tidskrift, 2013

Detailed S-parameter and noise characterization and modeling of ultralow-noise InP/InAlAs/InGaAs high-electron mobility transistors (InP HEMTs) optimized for operation at 10 K are presented. At the optimum low-noise bias at 10 K, the InP HEMT exhibited a 60% improvement in cutoff frequency f(T) and a 100% improvement in dc transconductance g(m) compared with 300 K. A small-signal noise model was evaluated at different bias conditions at 10 and 300 K. The bias dependence of the minimum noise temperature at low-noise operation was modeled at 10 K. The temperature dependence of the threshold voltage V-T,V- gm, and gate-source and gate-drain capacitances C-gs and C-gd indicated that the excellent cryogenic noise performance of optimized InP HEMTs is due to a higher degree of confinement in the carrier concentration closest to the gate at 10 K compared with 300 K. As a result, a fast depletion of the HEMT channel with respect to drain current I-d occurs under cryogenic operation.

Författare

Joel Schleeh

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Helena Rodilla

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Niklas Wadefalk

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 60 1 206-212

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TED.2012.2227485