Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Journal article, 2013

Detailed S-parameter and noise characterization and modeling of ultralow-noise InP/InAlAs/InGaAs high-electron mobility transistors (InP HEMTs) optimized for operation at 10 K are presented. At the optimum low-noise bias at 10 K, the InP HEMT exhibited a 60% improvement in cutoff frequency f(T) and a 100% improvement in dc transconductance g(m) compared with 300 K. A small-signal noise model was evaluated at different bias conditions at 10 and 300 K. The bias dependence of the minimum noise temperature at low-noise operation was modeled at 10 K. The temperature dependence of the threshold voltage V-T,V- gm, and gate-source and gate-drain capacitances C-gs and C-gd indicated that the excellent cryogenic noise performance of optimized InP HEMTs is due to a higher degree of confinement in the carrier concentration closest to the gate at 10 K compared with 300 K. As a result, a fast depletion of the HEMT channel with respect to drain current I-d occurs under cryogenic operation.

Author

Joel Schleeh

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Niklas Wadefalk

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 60 1 206-212

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TED.2012.2227485

More information

Created

10/7/2017