An InP MMIC process optimized for low noise at Cryo
Paper i proceeding, 2014

An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.

MMIC

InP HEMT

Low noise amplifier (LNA)

Cryogenic

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Publicerad i

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

1550-8781 (ISSN)


9781479936229 (ISBN)

Kategorisering

Ämneskategorier (SSIF 2011)

Elektroteknik och elektronik

Identifikatorer

DOI

10.1109/CSICS.2014.6978542

ISBN

9781479936229

Mer information

Skapat

2017-10-07