John Halonen
Forskningsingenjör vid
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Forskningsingenjör
Källa: chalmers.se
Visar 7 publikationer
2017
Cryogenic LNAs for SKA band 2 to 5
Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2016
Cryogenic low-noise InP HEMTs: A source-drain distance study
Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2015
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper i proceeding
2014
An InP MMIC process optimized for low noise at Cryo
Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper i proceeding
2012
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper i proceeding
2012
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Artikel i vetenskaplig tidskrift
2011
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Joel Schleeh, John Halonen, Bengt Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper i proceeding
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