Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Paper i proceeding, 2010

In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on C gs , g m and f c .

Författare

H. Rodilla

Universidad de Salamanca

T. Gonzalez

Universidad de Salamanca

Mikael Malmkvist

Ericsson Microwave Systems AB

Eric Lefebvre

OSRAM Opto Semiconductors

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

J. Mateos

Universidad de Salamanca

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010

1092-8669 (ISSN)

333-336

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICIPRM.2010.5516410

ISBN

978-142445920-9

Mer information

Senast uppdaterat

2018-09-03