Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Paper in proceeding, 2010
In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on C gs , g m and f c .
Author
H. Rodilla
University of Salamanca
T. Gonzalez
University of Salamanca
Mikael Malmkvist
Ericsson
Eric Lefebvre
OSRAM Opto Semiconductors
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. Mateos
University of Salamanca
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010
1092-8669 (ISSN)
333-336978-142445920-9 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIPRM.2010.5516410
ISBN
978-142445920-9