Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Paper i proceeding, 2012

The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.

InAs/AlSb

ultra-low power

low noise

LNA

Hybrid

high electron mobility transistor (HEMT)

Författare

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Wadefalk

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

L. Desplanque

X. Wallart

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012

373-376

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

ISBN

978-2-87487-028-6

Mer information

Skapat

2017-10-08