Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Paper in proceedings, 2012

The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.

InAs/AlSb

ultra-low power

low noise

LNA

Hybrid

high electron mobility transistor (HEMT)

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

L. Desplanque

X. Wallart

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012

373-376

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

ISBN

978-2-87487-028-6

More information

Created

10/8/2017