Sb-HEMT: Toward 100-mV Cryogenic Electronics
Artikel i vetenskaplig tidskrift, 2010
In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.
alsb/inas hemts
mosfet
field-effect transistors
Antimonide-based compound semiconductor
impact ionization
III-V semiconductors
noise
amplifier
low-power electronics
high-electron mobility transistors (HEMTs)
temperature
high-frequency
cryogenic electronics
InAs/AlSb
inas/alsb hemt
Författare
A. Noudeviwa
Lille I: Universite des Sciences et Technologies de Lille
Y. Roelens
Lille I: Universite des Sciences et Technologies de Lille
F. Danneville
Lille I: Universite des Sciences et Technologies de Lille
A. Olivier
Lille I: Universite des Sciences et Technologies de Lille
N. Wichmann
Lille I: Universite des Sciences et Technologies de Lille
N. Waldhoff
Lille I: Universite des Sciences et Technologies de Lille
S. Lepilliet
Lille I: Universite des Sciences et Technologies de Lille
G. Dambrine
Lille I: Universite des Sciences et Technologies de Lille
L. Desplanque
Lille I: Universite des Sciences et Technologies de Lille
X. Wallart
Lille I: Universite des Sciences et Technologies de Lille
Giuseppe Moschetti
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
S. Bollaert
Lille I: Universite des Sciences et Technologies de Lille
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 57 8 1903-1909 5487381Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/TED.2010.2050109