Sb-HEMT: Toward 100-mV Cryogenic Electronics
Artikel i vetenskaplig tidskrift, 2010

In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.

alsb/inas hemts

mosfet

field-effect transistors

Antimonide-based compound semiconductor

impact ionization

III-V semiconductors

noise

amplifier

low-power electronics

high-electron mobility transistors (HEMTs)

temperature

high-frequency

cryogenic electronics

InAs/AlSb

inas/alsb hemt

Författare

A. Noudeviwa

Lille I: Universite des Sciences et Technologies de Lille

Y. Roelens

Lille I: Universite des Sciences et Technologies de Lille

F. Danneville

Lille I: Universite des Sciences et Technologies de Lille

A. Olivier

Lille I: Universite des Sciences et Technologies de Lille

N. Wichmann

Lille I: Universite des Sciences et Technologies de Lille

N. Waldhoff

Lille I: Universite des Sciences et Technologies de Lille

S. Lepilliet

Lille I: Universite des Sciences et Technologies de Lille

G. Dambrine

Lille I: Universite des Sciences et Technologies de Lille

L. Desplanque

Lille I: Universite des Sciences et Technologies de Lille

X. Wallart

Lille I: Universite des Sciences et Technologies de Lille

Giuseppe Moschetti

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

S. Bollaert

Lille I: Universite des Sciences et Technologies de Lille

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 57 1903-1909

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TED.2010.2050109