Sb-HEMT: Toward 100-mV Cryogenic Electronics
Journal article, 2010

In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.

alsb/inas hemts

mosfet

field-effect transistors

Antimonide-based compound semiconductor

impact ionization

III-V semiconductors

noise

amplifier

low-power electronics

high-electron mobility transistors (HEMTs)

temperature

high-frequency

cryogenic electronics

InAs/AlSb

inas/alsb hemt

Author

A. Noudeviwa

Lille 1 University of Science and Technology

Y. Roelens

Lille 1 University of Science and Technology

F. Danneville

Lille 1 University of Science and Technology

A. Olivier

Lille 1 University of Science and Technology

N. Wichmann

Lille 1 University of Science and Technology

N. Waldhoff

Lille 1 University of Science and Technology

S. Lepilliet

Lille 1 University of Science and Technology

G. Dambrine

Lille 1 University of Science and Technology

L. Desplanque

Lille 1 University of Science and Technology

X. Wallart

Lille 1 University of Science and Technology

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

S. Bollaert

Lille 1 University of Science and Technology

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 57 8 1903-1909

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TED.2010.2050109

More information

Latest update

5/14/2018