A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology
Paper i proceeding, 2014

A G-Band planar stubbed branch-line balun is designed and fabricated in 3μm thick BCB technology. This topology of the balun does not need thru-substrate via hole or thin-film resistor which makes it extremely suitable for realization on single-layer high-resistivity substrates commonly used at millimeter-wave or post-processed BCB layers on top of standard semi-insulating wafers. The design is simulated and validated by measurements. Measurement results on two fabricated back-toback baluns show better than 10 dB input and output return loss and 3.2 dB insertion loss from 140 to 220 GHz.

wideband

BCB

stubs

planar

broadband 180 phase shifter

branch line

Balun

Författare

Sona Carpenter

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Yogesh Karandikar

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, South Korea, 5-8 November 2013

273-275

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

DOI

10.1109/APMC.2013.6695117

ISBN

978-1-4799-1474-6

Mer information

Skapat

2017-10-08