High Frequency 4H-SiC MOSFETs
Paper i proceeding, 2007
We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax11.2 GHz for a device with 0.5 μm nominal channel length. Functional devices with 0.3 μm nominal channel length were also made. These devices gave fT=T5.1 GHz and fmax=T9.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.
High frequency
RF
MOSFET
High power
4H-SiC
Författare
Gudjon Gudjonsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Fredrik Allerstam
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Hans Hjelmgren
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Einar Sveinbjörnsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap
Thomas Rödle
NXP Semiconductors Netherlands
Hendrikus Jos
NXP Semiconductors Netherlands
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 556-557 795-7980878494421 (ISBN)
Ämneskategorier (SSIF 2025)
Materialteknik
Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.4028/0-87849-442-1.795