Fredrik Allerstam

Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Electrical Characterization of Thermally Oxidized Silicon Carbide

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

High Frequency 4H-SiC MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

High power-density 4H-SiC RF MOSFETs

Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

High Power Density 4H-SiC RF MOSFETs

High channel mobility 4H-SiC MOSFETs

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Fabrication of high power-density SiC MOSFETs

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment