Fredrik Allerstam

Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Electrical Characterization of Thermally Oxidized Silicon Carbide

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

High Frequency 4H-SiC MOSFETs

Design and Fabrication of 4H-SiC RF MOSFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

High channel mobility 4H-SiC MOSFETs

High power-density 4H-SiC RF MOSFETs

Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

High Power Density 4H-SiC RF MOSFETs

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Fabrication of high power-density SiC MOSFETs

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment