Fredrik Allerstam

Visar 30 publikationer

2013

Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface

P.G. Hermannsson, Fredrik Allerstam, S. Hauksson et al
Materials Science Forum. Vol. 740-742, p. 749-752
Artikel i vetenskaplig tidskrift
2010

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Hans Hjelmgren, Fredrik Allerstam, Kristoffer Andersson et al
IEEE Transactions on Electron Devices. Vol. 57 (3), p. 729-732
Artikel i vetenskaplig tidskrift
2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al
Journal of Applied Physics. Vol. 108 (1)
Artikel i vetenskaplig tidskrift
2009

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Fredrik Allerstam, Einar Sveinbjörnsson
Materials Science Forum. Vol. 600-603, p. 755-758
Paper i proceeding
2009

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling et al
Materials Science Forum. Vol. 600-603, p. 1151-1154
Paper i proceeding
2009

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

V. Tilak, K. Matocha, G. Dunne et al
IEEE Transactions on Electron Devices. Vol. 56 (2), p. 162-169
Artikel i vetenskaplig tidskrift
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Artikel i vetenskaplig tidskrift
2009

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Fredrik Allerstam, Einar Sveinbjörnsson
Materials Science Forum. Vol. 615 617, p. 537-540
Paper i proceeding
2009

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

V. Tilak, K. Matocha, G. Dunne et al
Materials Science Forum. Vol. 600-603, p. 687-690
Paper i proceeding
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper i proceeding
2008

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling et al
Applied Physics Letters. Vol. 92, p. 082113-
Artikel i vetenskaplig tidskrift
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Artikel i vetenskaplig tidskrift
2007

High Frequency 4H-SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Per-Åke Nilsson et al
Materials Science Forum. Vol. 556-557, p. 795-798
Paper i proceeding
2007

Design and Fabrication of 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Einar Sveinbjörnsson et al
IEEE Transactions on Electron Devices. Vol. 54 (12), p. 3138-3145
Artikel i vetenskaplig tidskrift
2007

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldor Olafsson, Gudjon Gudjonsson et al
Journal of Applied Physics. Vol. 101, p. 124502-
Artikel i vetenskaplig tidskrift
2007

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Einar Sveinbjörnsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 556-557, p. 487-492
Paper i proceeding
2007

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Semiconductor Science and Technology. Vol. 22 (4), p. 307-311
Artikel i vetenskaplig tidskrift
2007

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

H. S. Lee, M. Domeij, C.M. Zetterling et al
IEEE Electron Device Letters. Vol. 28 (11), p. 1007-1009
Artikel i vetenskaplig tidskrift
2007

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Fredrik Allerstam, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Materials Science Forum. Vol. 556-557, p. 517-520
Paper i proceeding
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper i proceeding
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper i proceeding
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Artikel i vetenskaplig tidskrift
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldor Olafsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Electronics Letters. Vol. 41 (14), p. 825-826
Artikel i vetenskaplig tidskrift
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Materials Science Forum. Vol. 483-485, p. 837-840
Artikel i vetenskaplig tidskrift

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