Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
Artikel i vetenskaplig tidskrift, 2007

In this work two oxidation methods aimed at improving the silicon face 4H-SiC/SiO 2 interface are compared. One is an oxidation in N 2 O performed in a quartz tube using quartz sample holders and the other is a dry oxidation performed in an alumina tube using alumina sample holders. In n-type metal oxide semiconductor (MOS) capacitors the interface state density near the SiC conduction band edge is estimated using capacitance-voltage (C-V) and thermal dielectric relaxation current (TDRC) measurements. N-channel metal oxide semiconductor field effect transistors (MOSFETs) are characterized by current-voltage (I-V) techniques and the inversion channel mobility is extracted. It is shown that the high inversion channel mobility (154 cm 2 V -1 s -1 ) seen in samples oxidized using alumina correlates with a low interface trap density (3.6 × 10 11 cm -2 ). In the case of N 2 O oxidation the mobility is lower (24 cm 2 V -1 s -1 ) and the interface trap density is higher (1.6 × 10 12 cm -2 ). Room temperature C-V measurements are of limited use when studying traps near the conduction band edge in MOS structures while the TDRC measurement technique gives a better estimate of their density. © 2007 IOP Publishing Ltd.

Författare

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gudjon Gudjonsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Halldor Olafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thomas Rödle

NXP Semiconductors

Hendrikus Jos

NXP Semiconductors

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 22 4 307-311

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1088/0268-1242/22/4/002