Halldor Olafsson

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

High power-density 4H-SiC RF MOSFETs

High Power Density 4H-SiC RF MOSFETs

High channel mobility 4H-SiC MOSFETs

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Fabrication of high power-density SiC MOSFETs

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

High field effect electron mobility in Si face 4H-SiC MOSFET

Detection and removal of traps at the SiO2/SiC interface

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Shallow traps at the SiO₂/SiC interface