Halldor Olafsson

Visar 23 publikationer

2007

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldor Olafsson, Gudjon Gudjonsson et al
Journal of Applied Physics. Vol. 101, p. 124502-
Artikel i vetenskaplig tidskrift
2007

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Einar Sveinbjörnsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 556-557, p. 487-492
Paper i proceeding
2007

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Semiconductor Science and Technology. Vol. 22 (4), p. 307-311
Artikel i vetenskaplig tidskrift
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper i proceeding
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper i proceeding
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Artikel i vetenskaplig tidskrift
2005

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

E. Pippel, J Woltersdorf, Halldor Olafsson et al
Journal of Applied Physics. Vol. 97, p. 034302-
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Artikel i vetenskaplig tidskrift
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldor Olafsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Electronics Letters. Vol. 41 (14), p. 825-826
Artikel i vetenskaplig tidskrift
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Materials Science Forum. Vol. 483-485, p. 837-840
Artikel i vetenskaplig tidskrift
2005

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Tamara Rudenko, I. Osiyuk, I. Tyagulski et al
Solid State Electronics. Vol. 49, p. 545-553
Artikel i vetenskaplig tidskrift
2004

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Tamara Rudenko, Halldor Olafsson, Einar Sveinbjörnsson et al
Microelectronics Engineering. Vol. 72, p. 213-
Artikel i vetenskaplig tidskrift
2004

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Gudjon Gudjonsson, Halldor Olafsson, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1425-1428
Artikel i vetenskaplig tidskrift
2004

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

Halldor Olafsson, Christer Hallin, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1305-1308
Artikel i vetenskaplig tidskrift
2004

High field effect electron mobility in Si face 4H-SiC MOSFET

Halldor Olafsson, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Electronics Letters. Vol. 40, p. 508-510
Artikel i vetenskaplig tidskrift
2004

Detection and removal of traps at the SiO2/SiC interface

Halldor Olafsson
Doktorsavhandling
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Artikel i vetenskaplig tidskrift
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper i proceeding
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al
Applid Physics Letters. Vol. 85, p. 3578-
Artikel i vetenskaplig tidskrift
2002

Shallow traps at the SiO₂/SiC interface

Halldor Olafsson
Licentiatavhandling

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