Halldor Olafsson

Showing 23 publications

2007

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldor Olafsson, Gudjon Gudjonsson et al
Journal of Applied Physics. Vol. 101, p. 124502-
Journal article
2007

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Einar Sveinbjörnsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 556-557, p. 487-492
Paper in proceedings
2007

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Semiconductor Science and Technology. Vol. 22 (4), p. 307-311
Journal article
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper in proceedings
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper in proceedings
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Journal article
2005

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

E. Pippel, J Woltersdorf, Halldor Olafsson et al
Journal of Applied Physics. Vol. 97, p. 034302-
Journal article
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Journal article
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Journal article
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Conference contribution
2005

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldor Olafsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Electronics Letters. Vol. 41 (14), p. 825-826
Journal article
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Journal article
2005

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Materials Science Forum. Vol. 483-485, p. 837-840
Journal article
2005

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Tamara Rudenko, I. Osiyuk, I. Tyagulski et al
Solid State Electronics. Vol. 49, p. 545-553
Journal article
2004

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Tamara Rudenko, Halldor Olafsson, Einar Sveinbjörnsson et al
Microelectronics Engineering. Vol. 72, p. 213-
Journal article
2004

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Gudjon Gudjonsson, Halldor Olafsson, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1425-1428
Journal article
2004

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

Halldor Olafsson, Christer Hallin, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1305-1308
Journal article
2004

High field effect electron mobility in Si face 4H-SiC MOSFET

Halldor Olafsson, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Electronics Letters. Vol. 40, p. 508-510
Journal article
2004

Detection and removal of traps at the SiO2/SiC interface

Halldor Olafsson
Doctoral thesis
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Journal article
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper in proceedings
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al
Applid Physics Letters. Vol. 85, p. 3578-
Journal article
2002

Shallow traps at the SiO₂/SiC interface

Halldor Olafsson
Licentiate thesis

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