High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Journal article, 2005
Author
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Halldor Olafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gudjon Gudjonsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mikael Syväjärvi
R. Yakimova
C. Hallin
Thomas Rödle
Hendrikus Jos
Materials Science Forum
Vol. 483-485 841-844
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering