Fredrik Allerstam
Showing 30 publications
Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs
A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen
1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC
Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs
Electrical Characterization of Thermally Oxidized Silicon Carbide
Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs
Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain
Design and Fabrication of 4H-SiC RF MOSFETs
Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps
High power-density 4H-SiC RF MOSFETs
Electrical properties of thermal oxides on SiC manufactured in an alumina furnace
High channel mobility 4H-SiC MOSFETs
High Power Density 4H-SiC RF MOSFETs
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material
Fabrication of high power-density SiC MOSFETs
High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment
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