High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment
Journal article, 2005
Author
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gudjon Gudjonsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Halldor Olafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thomas Rödle
Hendrikus Jos
Materials Science Forum
Vol. 483-485 837-840
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering