Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
Paper in proceeding, 2007

This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.

Deep interface trap

Interface states

Sodium

Author

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Gudjon Gudjonsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thomas Rödle

NXP Semiconductors Netherlands

Hendrikus Jos

NXP Semiconductors Netherlands

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 556-557 517-520
0878494421 (ISBN)

6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
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Subject Categories

Condensed Matter Physics

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Latest update

10/3/2023