Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Paper i proceeding, 2007

This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.