Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
Paper i proceeding, 2007

This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.

Deep interface trap

Interface states

Sodium

Författare

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Gudjon Gudjonsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Thomas Rödle

NXP Semiconductors Netherlands

Hendrikus Jos

NXP Semiconductors Netherlands

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 556-557 517-520
0878494421 (ISBN)

6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
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Senast uppdaterat

2023-10-03